STW23NM60ND MOSFET N-channel 600V, 20A FDMesh II

Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 19.5 A
Rds On – Drain-Source Resistance: 180 mOhms
Vgs – Gate-Source Voltage: – 25 V, + 25 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 150 W
Channel Mode: Enhancement
Series: STW23NM60ND
Packaging: Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 40 ns
Height: 20.15 mm
Length: 15.75 mm
Product Type: MOSFET
Rise Time: 45 ns
Factory Pack Quantity: 30
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 90 ns
Typical Turn-On Delay Time: 25 ns
Width: 5.15 mm
Unit Weight: 6 g