CSD88537ND MOSFET 60-V Dual N-Channel Power MOSFET

Manufacturer: Texas Instruments
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOIC-8
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 16 A
Rds On – Drain-Source Resistance: 15 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.6 V
Qg – Gate Charge: 14 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 2.1 W
Channel Mode: Enhancement
Tradename: NexFET
Series: CSD88537ND
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Texas Instruments
Configuration: Dual
Fall Time: 19 ns
Height: 1.75 mm
Length: 4.9 mm
Product Type: MOSFET
Rise Time: 15 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 5 ns
Typical Turn-On Delay Time: 6 ns
Width: 3.9 mm
Unit Weight: 74 mg