IPP045N10N3 G MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 100 A
Rds On – Drain-Source Resistance: 3.9 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 117 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 214 W
Channel Mode: Enhancement
Tradename: OptiMOS
Series: OptiMOS 3
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 14 ns
Forward Transconductance – Min: 73 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 59 ns
Factory Pack Quantity: 500
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 27 ns
Width: 4.4 mm
Part # Aliases: SP000680794 IPP45N1N3GXK IPP045N10N3GXKSA1
Unit Weight: 2 g