IRFP4668PBF MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 200 V
Id – Continuous Drain Current: 130 A
Rds On – Drain-Source Resistance: 9.7 mOhms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 1.8 V
Qg – Gate Charge: 161 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 520 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 74 ns
Forward Transconductance – Min: 150 S
Height: 20.7 mm
Length: 15.87 mm
Product Type: MOSFET
Rise Time: 105 ns
Factory Pack Quantity: 400
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 64 ns
Typical Turn-On Delay Time: 41 ns
Width: 5.31 mm
Unit Weight: 6 g