IRFB4227PBF MOSFET MOSFT 200V 65A 26mOhm 70nC Qg

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 200 V
Id – Continuous Drain Current: 65 A
Rds On – Drain-Source Resistance: 24 mOhms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 1.8 V
Qg – Gate Charge: 70 nC
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 330 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 31 ns
Forward Transconductance – Min: 49 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 20 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 21 ns
Typical Turn-On Delay Time: 33 ns
Width: 4.4 mm
Unit Weight: 2 g