IPB083N10N3GATMA1 MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-263-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 80 A
Rds On – Drain-Source Resistance: 7.2 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 55 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 125 W
Channel Mode: Enhancement
Tradename: OptiMOS
Series: OptiMOS 3
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 8 ns
Forward Transconductance – Min: 45 S
Height: 4.4 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 42 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 31 ns
Typical Turn-On Delay Time: 18 ns
Width: 9.25 mm
Part # Aliases: IPB083N10N3 G SP000458812
Unit Weight: 4 g