IPC100N04S5L1R9ATMA1 MOSFET MOSFET_(20V 40V)

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TDSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 40 V
Id – Continuous Drain Current: 100 A
Rds On – Drain-Source Resistance: 1.9 mOhms
Vgs – Gate-Source Voltage: – 16 V, + 16 V
Vgs th – Gate-Source Threshold Voltage: 1.6 V
Qg – Gate Charge: 81 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 100 W
Channel Mode: Enhancement
Qualification: AEC-Q101
Packaging: Reel
Packaging: Cut Tape
Brand: Infineon Technologies
Configuration: Single
Fall Time: 22 ns
Product Type: MOSFET
Rise Time: 5 ns
Factory Pack Quantity: 5000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 29 ns
Typical Turn-On Delay Time: 5 ns
Part # Aliases: IPC100N04S5L-1R9 SP001360570
Unit Weight: 112.430 mg