SQJ459EP-T1-GE3 MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified

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3500 in stock


MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified

DOWNLOAD DATASHEET: SQJ459EPT1GE3.pdf

Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: PowerPAK-SO-8L-4
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 52 A
Rds On – Drain-Source Resistance: 18 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1.5 V
Qg – Gate Charge: 73 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 83 W
Channel Mode: Enhancement
Qualification: AEC-Q101
Tradename: TrenchFET
Series: SQ
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 45 ns
Forward Transconductance – Min: 40 S
Height: 1.04 mm
Length: 6.15 mm
Product Type: MOSFET
Rise Time: 19 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 88 ns
Typical Turn-On Delay Time: 12 ns
Width: 5.13 mm
Unit Weight: 506.600 mg

SKU: 1446 Category: Tags: ,

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