TK100E10N1,S1X MOSFET 100V N-Ch PWR FET 8800pF 140nC 207A

Manufacturer: Toshiba
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 207 A
Rds On – Drain-Source Resistance: 3.4 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 140 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 255 W
Channel Mode: Enhancement
Tradename: U-MOSVIII-H
Series: TK100E10N1
Packaging: Tube
Brand: Toshiba
Configuration: Single
Height: 15.1 mm
Length: 10.16 mm
Product Type: MOSFET
Factory Pack Quantity: 50
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 4.45 mm
Unit Weight: 2 g