755-2SC5658FHAT2LR Bipolar Transistors – BJT TRANSISTOR


200 in stock

The 755-2SC5658FHAT2LR is a high-quality bipolar junction transistor (BJT) that is commonly used in electronic circuits. It is manufactured by Toshiba, a leading semiconductor company that has a reputation for producing reliable and high-performance components.

The 755-2SC5658FHAT2LR is an NPN transistor that is designed to handle high-power applications. It has a maximum power dissipation of 2 watts, making it suitable for use in a range of electronic devices that require high levels of power output.

One of the key advantages of the 755-2SC5658FHAT2LR is its high gain. This means that it can amplify weak signals to produce a much stronger output signal, making it ideal for use in audio amplifiers, power supplies, and other applications that require high levels of amplification.

The 755-2SC5658FHAT2LR also features a low collector-to-emitter saturation voltage, which helps to reduce power consumption and improve the efficiency of your circuit. Additionally, it has a fast switching speed, which makes it suitable for use in high-frequency applications.

If you’re looking for a high-performance BJT for your electronic circuit, the 755-2SC5658FHAT2LR is an excellent choice. It offers a range of benefits, including high gain, low power consumption, and fast switching speed, making it suitable for a wide range of applications.

In summary, the 755-2SC5658FHAT2LR is a high-quality NPN bipolar junction transistor that offers a range of benefits for electronic circuits. With its high gain, low power consumption, and fast switching speed, it is sure to provide reliable and efficient performance for your electronic devices. So if you’re in need of a high-performance BJT, the 755-2SC5658FHAT2LR is definitely worth considering.

Bipolar Transistors – BJT TRANSISTOR



Manufacturer: ROHM Semiconductor
Product Category: Bipolar Transistors – BJT
RoHS: Details
Mounting Style: SMD/SMT
Package/Case: SOT-723-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 50 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 400 mV
Maximum DC Collector Current: 200 mA
Pd – Power Dissipation: 150 mW
Gain Bandwidth Product fT: 180 MHz
Maximum Operating Temperature: + 150 C
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: ROHM Semiconductor
Continuous Collector Current: 150 mA
DC Collector/Base Gain hFE Min: 120 at 1 mA, 6 V
DC Current Gain hFE Max: 390 at 1 mA, 6 V
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 8000
Subcategory: Transistors
Technology: Si

SKU: 110 Category: Tags: ,

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